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triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGC4403 jun 2007 ? rev a datasheet subject to change without notice. primary applications product description key features measured performance 8 - 15 ghz doubler with amplifier ? input frequency range: 8 - 15 ghz ? chip dimensions: 2.068 x 0.88 x 0.1 mm ? technology: 3mi 0.25 um power phemt ? bias: vd = 5 v, id = 150 ma, vg = -0.5 v typical ? 10 dbc input frequency isolation ? 20 db gain ? 22 dbm nominal pout ? rf output frequency range: 16-30 ghz ? ka band sat-com ? point-to-point radio the triquint TGC4403 mmic combines a frequency doubler with a 3-stage amplifier, operating at input frequencies of 8 - 15 ghz. with greater than 30 dbc suppression measured at the output between the input frequency and doubled frequency, the TGC4403 achieves 22 dbm output power, with 2 dbm input power. this performance makes this doubler ideally suited for point to point radios and ka band satellite ground terminal applications. the TGC4403 utilizes triquint?s robust 0.25um power phemt process coupled with 3 layer metal inteconnect (3mi) technology. the TGC4403 provides the frequency doubling function in an extremely compact (< 1.8 mm 2 ) chip footprint. each device is 100% dc and rf tested on?wafer to ensure performance compliance. the device is available in chip form. the TGC4403 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant. bias conditions: vd = 5 v, id = 150 ma, vdbl= -0.8 v, vg = -0.5 v typical 0 5 10 15 20 25 30 16 18 20 22 24 26 28 30 2 x input frequency (ghz) output power at 2 x input freq (dbm) pin = 2 dbm -40 -30 -20 -10 0 10 20 5 10 15 20 25 30 35 40 45 frequency (ghz) isolation (dbc) fundamental 3x fund output @ fund freq - input @ fund freq output @ 3x fund freq - input @ fund freq
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGC4403 jun 2007 ? rev a table ii recommended operating conditions table i absolute maximum ratings 1/ -0.6 to 16.8 ma doubler current range idbl -5 to 0 v doubler voltage range vdbl 2/ 18.2 dbm input continuous wave power pin -1 to 23.ma gate current range ig 2/ 280 ma positive current id -5 to 0 v gate voltage range vg 2/ 8 v drain voltage vd 12 v drain to gate voltage vd-vg notes value parameter symbol 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, an d functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current, i nput power, and output power shall not exceed the maximum power dissipation listed in table iv. 170 ma drain current with rf input = 2 dbm id_drive -0.8 v doubler voltage vdbl -0.5 v gate voltage vg 150 ma drain current (quiescent) id 5 v drain voltage vd value parameter 1/ symbol 1/ see assembly diagram for bias instructions.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGC4403 jun 2007 ? rev a table iii rf characterization table bias: vd = 5 v, id = 150 ma, vg = -0.5 v, vdbl = -0 .8 v typical - -- - - - -- - 15 max 0 - 16 21 23 - - - - 14 19 21 - 8 min ghz - input frequency range rf_freq dbc 10 f = 16 - 28 ghz isolation isol dbm 20 20 26 26 22 f = 16 ghz f = 18 - 20 ghz f = 22 ghz f = 24 - 28 ghz f = 30 ghz output power (rfin = 2 dbm) pout db 7 f = 16 - 30 ghz output return loss orl db 7 f = 16 - 30 ghz input return loss irl db 17 18 21 24 20 f = 16 ghz f = 18 - 22 ghz f = 24 ghz f = 26 - 28 ghz f = 30 ghz conversion gain gain units nominal test conditions parameter symbol
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGC4403 jun 2007 ? rev a table iv power dissipation and thermal properties power de-rating curve 1/ for a median life of 1e+6 hours, power dissipati on is limited to pd(max) = (150 oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affec t the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. -65 to 150 oc storage temperature 320 oc 30 seconds mounting temperature jc = 56.3 (oc/w) tchannel = 109 oc tm = 4.6e+7 hrs vd = 5 v id = 170 ma pout = 22 dbm pd = 0.69 w thermal resistance, jc under rf drive jc = 56.3 (oc/w) tchannel = 112 oc tm = 3.4e+7 hrs vd = 5 v id = 150 ma pd = 0.75 w thermal resistance, jc 1/ 2/ pd = 1.42 w tchannel = 150 oc tm = 1.0e+6 hrs tbaseplate = 70 oc maximum power dissipation notes value test conditions parameter 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 -50 -25 0 25 50 75 100 125 150 175 baseplate temp (c) power dissipated (w) tm= 1.0e+6 hrs
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGC4403 jun 2007 ? rev a measured data 0 5 10 15 20 25 30 12 14 16 18 20 22 24 26 28 30 32 34 2 x input frequency (ghz) output power at 2 x input freq (dbm) pin = 2 dbm bias conditions: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical -40 -30 -20 -10 0 10 20 5 10 15 20 25 30 35 40 45 frequency (ghz) isolation (dbc) fundamental 3x fund output @ fund freq - input @ fund freq output @ 3x fund freq - input @ fund freq
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGC4403 jun 2007 ? rev a measured data -50 -40 -30 -20 -10 0 10 20 30 40 6 8 10 12 14 16 1x input freq(ghz) conversion gain (db) 2x input freq, pin = 0 dbm 2x input freq,pin = -5 dbm 2x input freq, pin = +5 dbm -50 -40 -30 -20 -10 0 10 20 30 6 8 10 12 14 16 1x input freq(ghz) suppression (db) with respect to output power at 2x input freq 3x input freq, pin = 0 dbm 3x input freq, pin = -5 dbm 3x input freq, pin = +5 dbm 1x input freq, pin = 0 dbm 1x input freq, pin = -5 dbm 1x input freq, pin = -5 dbm bias conditions: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGC4403 jun 2007 ? rev a measured data -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 10 15 20 25 30 35 40 frequency (ghz) irl, orl (db) irl orl bias conditions: vd = 5 v, id = 150 ma, vdbl = -0.8 v, vg = -0.5 v typical
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGC4403 jun 2007 ? rev a electrical schematic bias procedures doubler 2x buffer TGC4403 rf in rf out vd vg vdbl 100 pf bias-up procedure ? vg set to -1.5 v ? vd set to +5 v ? vdbl set to -0.8 v ? adjust vg more positive until id is 150 ma. this w ill be ~ vg = -0.5 v ? apply signal to input, id will increase bias-down procedure ? turn off signal ? reduce vg to -1.5v. ensure id ~ 0 ma ? turn vdbl to 0v ? turn vd to 0v ? turn vg to 0v 100 pf 1 uf 100 pf 1 uf 15 1 uf 15 x 2
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGC4403 jun 2007 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing 0.081 x 0.081 vdbl bond pad #5 0.081 x 0.081 vg bond pad #4 0.100 x 0.150 rf out bond pad #3 0.081 x 0.081 vd bond pad #2 0.100 x 0.100 rf in bond pad #1 ground is backside of die chip edge to bond pad dimensions are shown to cente r of pad die x,y size tolerance: +/- 0.050 thickness: 0.10 units: millimeters 0.880 1 5 4 0.096 0.0 0.096 0.0 0.419 0.286 0.725 1.973 0.086 3 2 2.068 0.121 0.286 1.982 0.794 1.450
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGC4403 jun 2007 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram 1 f vd output input 100pf 100pf 100pf 1 f 15 vg vdbl 1 f 15
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGC4403 jun 2007 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly notes ordering information component placement and adhesive attachment assembl y notes: vacuum pencils and/or vacuum collets are the prefer red method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment (i.e. epoxy) can be used in low- power applications. curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: use ausn (80/20) solder and limit exposure to temper atures above 300 c to 3-4 minutes, maximum. an alloy station or conveyor furnace with reducing atmosphere should be used. do not use any kind of flux. coefficient of thermal expansion matching is critic al for long-term reliability. devices must be stored in a dry nitrogen atmosphere . interconnect process assembly notes: thermosonic ball bonding is the preferred interconne ct technique. force, time, and ultrasonics are critical parameters . aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. gaas mmic die TGC4403 package style part

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